Photoionization spectroscopy in AlGaN/GaN high electron mobility transistors

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5498-5502

  Klein, P B ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; AREAL DENSITIES; CURRENT COLLAPSE; DEEP TRAPS; DRAIN BIAS; GAN LAYERS; GATE DRAIN; LIGHT ILLUMINATION; MULTIPLE TRAPPING; PHOTOINDUCED TRANSITION; PHOTOIONIZATION CROSS SECTION; PHOTOIONIZATION SPECTROSCOPY; TRAPPING SITES;

ELECTRON GAS; HIGH ELECTRON MOBILITY TRANSISTORS; PHOTOIONIZATION;

GALLIUM NITRIDE;

EID: 18744364512     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1510564     Document Type: Article

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