Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies

Journal of Applied Physics

Volumn 87, Issue 11, 2000, Pages 7981-7987

  Zhang, Yifei ^a   Smorchkova, I P ^b   Elsass, C R ^b   Keller, Stacia ^b   Ibbetson, James P ^b   Denbaars, Steven ^b   Mishra, Umesh K ^b   Singh, Jasprit ^c  

^a UNIVERSITY OF MICHIGAN   (United States)

^b University of California   (United States)

^c University of Michigan   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1542275996     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373483     Document Type: Article

References (19)

1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys., Part 2 34, L1332 (1995); S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 69, 3034 (1996).
2. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys., Part 2 34, L1332 (1995); S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 69, 3034 (1996).
3. G. E. Bulman et al., Electron. Lett. 33, 1556 (1997).
4. M. P. Mack, A. Abare, M. Aizcorbe, P. Kozodoy, S. Keller, U. K. Mishra, L. Coldren, and S. DenBaars, MRS Internet J. Nitride Semicond. Res. 2, 41 (1997).
5. A. Kuramata, K. Domen, R. Soejima, K. Horino, S. Kubota, and T. Tanahashi, Jpn. J. Appl. Phys., Part 2 36, L1130 (1997).
6. O. Aktas, Z. F. Fan, A. Botchkarev, S. N. Mohammad, M. Roth, T. Jenkins, L. Kehias, and H. Morkoc, IEEE Electron Device Lett. 18, 293 (1997).
7. M. S. Shur and M. A. Kahn, MRS Bull. 22, 44 (1997).
8. Y. F. Wu, S. Keller, P. Kozodoy, B. P. Keller, P. Parikh, D. Kapolnek, S. P. DenBaars, and U. K. Mishra, IEEE Electron Device Lett. 18, 290 (1997).
9. U. K. Mishra, Y. F. Wu, B. P. Keller, S. Keller, and S. P. DenBaars, IEEE Trans. Microwave Theory Tech. 46, 756 (1998).
10. R. Dimitrov, L. Wittmer, H. P. Felsl, A. Mitchell, O. Ambacher, and M. Stutzmann, Phys. Status Solidi A 168, R7 (1998).
11. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
12. W. Q. Chen and S. K. Hark, J. Appl. Phys. 77, 5747 (1995).
13. O. Ambacher et al., J. Appl. Phys. 85, 3222 (1999).
14. C.-K. Sun, S. Keller, T.-L. Chiu, G. Wang, M. S. Minsky, J. E. Bowers, and S. P. DenBaars, IEEE J. Sel. Top. Quantum Electron. 3, 731 (1997).
15. I. P. Smorchkova et al., J. Appl. Phys. 86, 4520 (1999).
16. A. Polian, M. Grimsditch, and I. Grzegory, J. Appl. Phys. 79, 3343 (1996).
17. Properties of Group III Nitrides, edited by, J. H. Edgar (INSPEC, London, 1994).
18. Y. Zhang and J. Singh, J. Appl. Phys. 85, 587 (1999).
19. See for example, D. K. Ferry, Semiconductors (Macmillan, New York, 1991).