AlGaN/GaN heterostructure field-effect transistor model including thermal effects

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2031-2036

  Albrecht, John D ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; SAPPHIRE SUBSTRATES;

FIELD EFFECT TRANSISTORS;

EID: 0034318737     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877163     Document Type: Article

References (16)

1. S. N. Mohammed and H. Morkoç, "Progress and prospects of group-III nitride semiconductors," Prog. Quant. Electron., vol. 20, p. 361, 1996.
2. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, "GaN: Processing, defects, and devices," J. Appl. Phys., vol. 86, p. 1, 1999.
3. G. J. Sullivan et al, "High-power 10-GHz operation of AlGaN HET's on insulating SiC," IEEE Electron Device Lett., vol. 19, p. 198, 1998.
4. G. J. Sullivan et at., "High power RF operation of AlGaN/GaN HEMT's grown on insulating silicon carbide substrates," Electron. Lett., vol. 34, p. 922, 1998.
5. S. T. Sheppard et at., "High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates," IEEE Electron Device Lett., vol. 20, p. 161, 1999.
6. A. T. Ping et al., "DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates," IEEE Electron Device Lett., vol. 19, p. 54, 1998.
7. R. Gaskaetat., "High-temperature performance of AlGaN/GaN HFET's on SiC substrates," IEEE Electron Device Lett., vol. 18, p. 492, 1997.
8. P. P. Rüden et al., "Extrinsic performance limitations AlGaN/GaN heterostructure field effect transistors," MRS Internet J. Nitride Semicondut. Res. 4SI, vol. G6.35, 1999.
9. B. J. Thibeault et al., "High performance and flip-chip bonded AlGaN/GaN MODFETs," 1EDM Tech. Dig., p. 569, 1997.
10. T. Hariu, "Theoretical calculation of normally-off GaAs MESFET characteristics including effects of surface depletion layer," Jpn. J. Appl. Phys., vol. 21, p. L77, 1982.
11. S. E. Laux, D. J. Frank, and F. Stern, "Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure," Surf. Sci., vol. 101, p. 101, 1988.
12. J. D. Albrecht, R. P. Wang, P. P. Rüden, M. Farahmand, and K. F. Brennan, "Electron transport characteristics of GaN for high temperature device modeling," J. Appl. Phys., vol. 83, p. 4777, 1998.
13. J. D. Albrecht et al., "Current-voltage characteristics of ungated AlGaN/GaN heterostructures," in Proc. Materials Research Soc. Symp., vol. 572, 1999, p. 489.
14. Y-F. Wu etal., "GaN-basedFET's for microwave power amplification," IEICE Trans. Electron., vol. E82-C, p. 1895, 1999.
15. P. B. Klein, J. A. Freitas Jr., S. C. Binari, and A. E. Wickenden, "Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 75, p. 4016, 2000.
16. P. P. Rüden, "Heterostructure FET model including gate leakage," IEEE Trans. Electron Devices, vol. 37, p. 2267, 1990.