Theoretical model of transport characteristics of AlGaN/GaN high electron mobility transistors

Physica Status Solidi C: Conferences

Volumn 2, Issue 3, 2005, Pages 1047-1055

  Asgari, A ^a   Kalafi, M ^a   Faraone, L ^b  

^a UNIVERSITY OF TABRIZ   (Iran)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; LIGHT POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE; TRANSISTORS;

ELECTRON MOBILITY TRANSISTORS; POLARIZATION EFFECTS; SMALL-SIGNAL PARAMETERS; TRANSISTOR MODEL;

TRANSPORT PROPERTIES;

EID: 27344452007     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460618     Document Type: Conference Paper

References (17)

1. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck., J. Appl. Phys. 85, 3222 (1999).
2. M. Micovic, A. Kurdoghlian, P. Janke, P. Hashimoto, D. Wong, J. S. Moon, L. McCray, and C. Nguyen, IEEE Trans. Electron Devices 48, 591 (2001).
3. L. F. Eastman, V. Tilak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, K. Hyungtak, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W.J. Schaff, and J. R. Shealy, IEEE Trans. Electron Devices 48, 479 (2001).
4. W. Lu, V. Kumar, E. L. Piner, and I. Adesida, IEEE Trans. Electron Devices 50, 1069 (2003).
5. R. Coffie, D. Buttari, S. Heikman, S. Keller, A. Chini, L. Shen, and U. K. Mishra, IEEE. Electron Device Lett. 23, 588 (2002).
6. A. Minko, V. Hoël, S. Lepilliet, G. Dambrine, J. C. De Jaeger, Y. Cordier, F. Semond, F. Natali, and J. Massies, IEEE. Electron Device Lett. 25, 167 (2004).
7. Rashmi, A. Kranti, S. Haldar, M. Gupta, and R. S. Gupta, IEEE Trans. Microwave Theory Tech. 51, 607 (2003).
8. Rashmi, A. Kranti, S. Haldar, and R.S. Gupta, Solid-State Electron. 46, 621 (2002).
9. M. Kalafi and A. Asgari, Physica E 19, 321 (2003).
10. V. Fiorentini, F. Bernardini, and O. Ambacher, Appl. Phys. Lett. 80, 1204 (2002).
11. A. Asgari, M. Kalafi, and L. Faraone, J. Appl. Phys. 95, 1185 (2004).
12. F. Scconi, A. Di Carlo, P. Lugli, and H. Morkoc, IEEE Trans. Electron Devices 48, 450 (2001).
13. C. Anghel, A.M. Lonescu, N. Hefyene, and R. Gillon, European Solid-State Device Research, 33rd Conference on. ESSDERC '03, pages: 449-452, Sept. 16-18, 2003.
14. W. Jin,W. Liu, S. K. H. Fung, P. C. H. Chan, and C. Hu, IEEE Trans. Electron Devices 48, 730 (2001).
15. T. H. Yu and Kevin F. Brennan, IEEE Trans. Electron Devices 50, 315 (2003).
16. Y.-F. Wu, S. Keller, P. Kozodoy, B.P. Keller, P. Parikh, D. Kapolenek, S. P. Denbaares, and U. K. Mishra, IEEE Electron Device Lett. 18, 290 (1997).
17. Y.-F. Wu, B.P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kenias, S. P. Denbaares, and U. K. Mishra, IEEE Electron Device Lett. 19, 50 (1998).