Numerical simulation of current-voltage characteristics of AlGaN/GaN HEMTs at high temperatures

Semiconductor Science and Technology

Volumn 20, Issue 2, 2005, Pages 188-192

  Chang, Yuancheng ^a   Tong, K Y ^a   Surya, C ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM; HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; NITROGEN; POISSON EQUATION; POLARIZATION;

DRAIN CURRENTS; HETEROSTRUCTURE MATERIALS; MODELING; THERMAL ACTIVATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 13644274764     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/2/016     Document Type: Article

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