Carrier confinement in AlGaN/GaN heterostructures grown by plasma induced molecular beam epitaxy

Physica Status Solidi (A) Applied Research

Volumn 168, Issue 2, 1998, Pages

  Dimitrov, R ^a   Wittmer, L ^a   Felsl, H P ^a   Mitchell, A ^a   Ambacher, O ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

PLASMA INDUCED MOLECULAR BEAM EPITAXY (PIMBE);

HETEROJUNCTIONS;

EID: 0032139601     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199808)168:23.0.CO;2-B     Document Type: Article

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