Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors designed for high-power applications

Optical Materials

Volumn 23, Issue 1-2, 2003, Pages 211-217

  Maeda, Narihiko ^a   Tsubaki, Kotaro ^a   Saitoh, Tadashi ^a   Tawara, Takehiko ^a   Kobayashi, Naoki ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

2DEG; AlGaN GaN HFET; Back doping; Selective area regrowth

Indexed keywords

COMPOSITION; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; OSCILLATIONS; SEMICONDUCTOR DOPING;

BACK-DOPING;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0037732651     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(03)00046-6     Document Type: Conference Paper

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