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Volumn 25, Issue 1, 2004, Pages 86-92
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The effect of scattering mechanisms on the low field mobility in GaN/AlGaN heterostructures
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Author keywords
Dislocation scattering; III V nitrides; Quantum and transport scattering time; Transport properties
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Indexed keywords
ALUMINUM ALLOYS;
CARRIER MOBILITY;
DEFORMATION;
ELECTROMAGNETIC WAVE SCATTERING;
ELECTRONS;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
IMPURITIES;
LIGHT EMITTING DIODES;
OPTOELECTRONIC DEVICES;
PHONONS;
PIEZOELECTRICITY;
QUANTUM THEORY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
TRANSPORT PROPERTIES;
ULTRAVIOLET RADIATION;
DISLOCATION SCATTERING;
III-V NITRIDES;
ISOTROPIC SCATTERING;
QUANTUM AND TRANSPORT SCATTERING TIME;
HETEROJUNCTIONS;
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EID: 4944226589
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2004.06.038 Document Type: Article |
Times cited : (16)
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References (24)
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