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Volumn 25, Issue 1, 2004, Pages 86-92

The effect of scattering mechanisms on the low field mobility in GaN/AlGaN heterostructures

Author keywords

Dislocation scattering; III V nitrides; Quantum and transport scattering time; Transport properties

Indexed keywords

ALUMINUM ALLOYS; CARRIER MOBILITY; DEFORMATION; ELECTROMAGNETIC WAVE SCATTERING; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; IMPURITIES; LIGHT EMITTING DIODES; OPTOELECTRONIC DEVICES; PHONONS; PIEZOELECTRICITY; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSPORT PROPERTIES; ULTRAVIOLET RADIATION;

EID: 4944226589     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.06.038     Document Type: Article
Times cited : (16)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.