Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC

Applied Physics Letters

Volumn 81, Issue 16, 2002, Pages 3073-3075

  Arulkumaran, S ^a   Egawa, T ^a   Ishikawa, H ^a   Jimbo, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; COMPARATIVE STUDIES; CURRENT COLLAPSE; DEEP TRAPS; HIGH DRAIN VOLTAGE; MATERIAL DEFECT; SAPPHIRE SUBSTRATES; SEMI-INSULATING; SINUSOIDAL WAVE; THERMALLY ACTIVATED; WHITE LIGHT;

CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79956009786     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1512820     Document Type: Article

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