Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

IEEE Electron Device Letters

Volumn 17, Issue 7, 1996, Pages 325-327

  Asif Khan, M ^a   Chen, Q ^a   Yang, J W ^a   Shur, Michael S ^b,d   Dermott, B T ^c   Higgins, J A ^c,d  

^a APA Optronics   (United States)

^b University of Virginia ^*  (United States)

^c ROCKWELL SCIENCE CENTER   (United States)

^d IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HETEROJUNCTIONS; MICROWAVES; OHMIC CONTACTS; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

CUT OFF FREQUENCIES; GATE LENGTH; HALL MEASUREMENT; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; MICROWAVE OPERATIONS; PARASITIC SERIES RESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0030181719     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.506356     Document Type: Article

References (12)

1. M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, Appl. Phys. Lett., vol. 26, p 625, 1975.
2. B. Gelmont, K. S. Kim, and M. Shur, "Monte Carlo calculation of electron transport in gallium nitride," J. Appl. Phys., vol. 74, no. 3, pp. 1818-1821, 1993.
3. M. S. Shaur, B. Gelmont, and M. Asif Khan, "High electron mobility in two dimensional electrons gas in AlGaNlGaN heterostructures," Electron. Mater., vol. 25, no. 5, 1996..
4. M. Asif Khan, Q. Chen, C. J. Sun, M. S. Shur, and B. L. Glemont, "Two-dimensional electron gas in GaN-AlGaN heterostructures deposited using trimethylamine-alane as the aluminium source in low pressure metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 67, no. 10, pp. 1429-1431, 1995.
5. R. P. Joshi and P. K. Raha, in Proc. 5th conf. Silicon Carbide and Related Compounds. Philadelpha, PA: Institute of Physics, 1994, no. 137, p. 687.
6. M. A. Khan, M. S. Shur, J. N. Kuznia, J. Burm, and W. Schaff, "Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300°C," Appl. Phys. Lett., vol. 66, no. 9, pp. 1083-1085, 1995.
7. M. S. Shur, A. Khan, B. Gelmont, R. J. Trew, and M. W. Shin, "GaN/AlGaN field effect transitors for high temperature applications," in Institute of Physics Conf., 1995, no. 141, ch. 4, pp. 419-424.
8. Q. Chen, A. Khan, J. W. Yang, C. J. Sun, M. S. Shur, and H. Park, "High-transconductance heterostructure field effect transistors based on AlGaNlGaN," Appl. Phys. Lett., submitted for publication.
9. P. P. Ruden, M. S. Shur, A. I. Akinwande, J. Nohava, D. Grider, and J. H. Baek, "AlGaAs-InGaAs-GaAs quantum well doped channel heterostucture field effect transistors," IEEE Trans. Electron Devices, vol. 37, no. 10, pp. 2171-2175, 1990.
10. S. C. Binari, L. B. Rowland, G. Klener, W. Kruppa, H. B. Dietritch, K. Doverspike, and D. K. Gaskill, in Institute of Physics Conf., 1995, no. 141, ch. 4, p. 459.
11. M. S. Shur, GaAs Devices and Circuites. New York: Plenum, 1987.
12. K. Lee, M. S. Shur, T. A. Fjeldly, and T. Ytterdal, Semmiconductor Device Modeling for VLSI. Englewood Cliffs, NJ: Prentice-Hall, 1993.