Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

IEEE Electron Device Letters

Volumn 17, Issue 7, 1996, Pages 325-327

  Asif Khan, M ^a   Chen, Q ^a   Yang, J W ^a   Shur, Michael S ^b,d   Dermott, B T ^c   Higgins, J A ^c,d  

^a APA Optronics   (United States)

^b University of Virginia   (United States)

^c ROCKWELL SCIENCE CENTER   (United States)

^d IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HETEROJUNCTIONS; MICROWAVES; OHMIC CONTACTS; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

CUT OFF FREQUENCIES; GATE LENGTH; HALL MEASUREMENT; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; MICROWAVE OPERATIONS; PARASITIC SERIES RESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0030181719     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.506356     Document Type: Article

References (12)

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