Understanding Coulomb effects in nanoscale Schottky-barrier-FETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 6, 2007, Pages 1502-1509

  Indlekofer, Klaus Michael ^a   Knoch, Joachim ^a   Appenzeller, Joerg ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Coulomb interaction; Nanowire; Schottky barrier field effect transistors (SB FETs)

Indexed keywords

APPROXIMATION THEORY; COULOMB INTERACTIONS; ELECTRON TRANSPORT PROPERTIES; GREEN'S FUNCTION; NANOWIRES; QUANTUM ELECTRONICS;

HARTEE APPROXIMATION; MULTICONFIGURATIONAL SELF-CONSISTENT GREEN'S FUNCTION APPROACH; SCHOTTKY-BARRIER-FETS; SINGLE-ELECTRON;

MESFET DEVICES;

EID: 34249938170     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.895235     Document Type: Article

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