Vertical surround-gated silicon nanowire impact ionization field-effect transistors

Applied Physics Letters

Volumn 90, Issue 14, 2007, Pages

  Bjork M T ^a   Hayden, O ^a   Schmid, H ^a   Riel, H ^a   Riess, W ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GATES (TRANSISTOR); IMPACT IONIZATION; LIQUID PHASE EPITAXY; SILICON; THRESHOLD CURRENT DENSITY;

AVALANCHE BREAKDOWN; INVERSE SUBTHRESHOLD SLOPES; ULTRAHIGH DENSITY CIRCUITS;

NANOWIRES;

EID: 34047259517     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2720640     Document Type: Article

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