New current-defined threshold voltage model from 2D potential distribution calculations in MOSFETs

Solid-State Electronics

Volumn 39, Issue 1, 1996, Pages 43-48

  Biesemans, Serge ^a   Kubicek, Stefan ^a   De Meyer, Kristin ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; GEOMETRY; SEMICONDUCTOR DEVICE MODELS; VOLTAGE DISTRIBUTION MEASUREMENT;

FITTING PARAMETERS; GEOMETRY DEVICES; GROUND PLANE MOSFET; POISSON EQUATION; THRESHOLD VOLTAGE MODEL; TWO DIMENSIONAL POTENTIAL DISTRIBUTION;

MOSFET DEVICES;

EID: 0029755758     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00099-F     Document Type: Article

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