Doping limits of grown in situ doped silicon nanowires using phosphine

Nano Letters

Volumn 9, Issue 1, 2009, Pages 173-177

  Schmid, Heinz ^a   Björk, Mikael T ^a   Knoch, Joachim ^a   Karg, Siegfried ^a   Riel, Heike ^a   Riess, Walter ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; ELECTRIC WIRE; LEAD; NANOWIRES; PHOSPHORUS COMPOUNDS; SILANES;

CONTACT RESISTIVITIES; DOPANT INCORPORATIONS; DOPED SILICONS; DOPING CONCENTRATIONS; ELECTRICAL MEASUREMENTS; GAS CONCENTRATIONS; GAS-PHASE; HIGH SELECTIVITIES; IN-SITU; N-DOPED; RESISTIVITY MEASUREMENTS; SILICON NANOWIRES; STRUCTURAL CHARACTERIZATIONS; STRUCTURAL DEFECTS; VAPOR-LIQUID-SOLID GROWTHS;

DOPING (ADDITIVES);

NANOTUBE; PHOSPHINE; PHOSPHINE DERIVATIVE; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; PHOSPHINES; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES;

EID: 61649122400     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl802739v     Document Type: Article

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