Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors

Applied Physics Letters

Volumn 92, Issue 4, 2008, Pages

  Koswatta, Siyuranga O ^a   Lundstrom, Mark S ^a   Nikonov, Dmitri E ^b  

^a PURDUE UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTRON TUNNELING; ENERGY DISSIPATION; INTEGRATED CIRCUITS; PHONON SCATTERING;

PHONON ABSORPTION ASSISTED TUNNELING; SUBTHRESHOLD SWINGS; TEMPERATURE DEPENDENCE;

FIELD EFFECT TRANSISTORS;

EID: 38849117239     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2839375     Document Type: Article

References (32)

1. International Technology Roadmap for Semiconductors (ITRS) (www.itrs.net).
2. S. Banerjee, W. Richardson, J. Coleman, and A. Chatterjee, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/EDL.1987.26655 ED-8, 347 (1987).
3. T. Baba, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 10.1143/JJAP.31.L455 31, 455 (1992).
4. W. Hansch, C. Fink, J. Schulze, and I. Eisele, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(00)00896-8 369, 387 (2000).
5. K. K. Bhuwalka, J. Schulze, and I. Eisele, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2005.846318 52, 909 (2005).
6. Q. Zhang, W. Zhao, and A. Seabaugh, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2006.871855 27, 297 (2006).
7. A. S. Verhulst, W. G. Vandenberghe, K. Maex, and G. Groeseneken, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2757593 91, 053102 (2007).
8. T. Uemura and T. Baba, Solid-State Electron. SSELA5 0038-1101 10.1016/0038-1101(95)00281-2 40, 519 (1996).
9. W. M. Reddick and G. A. Amaratunga, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.114547 67, 494 (1995).
10. J. Koga and A. Toriumi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118970 70, 2138 (1997).
11. C. Aydin, A. Zaslavsky, S. Luryi, S. Cristoloveanu, D. Mariolle, D. Fraboulet, and S. Deleonibus, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1668321 84, 1780 (2004).
12. T. Nirschl, P. F. Wang, C. Weber, J. Sedlmeir, R. Heinrich, R. Kakoschke, K. Schrufer, J. Holz, C. Pacha, T. Schulz, M. Ostermayr, A. Olbrich, G. Georgakos, E. Ruderer, W. Hansch, and D. Schmitt-Landsiedel, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 10.1109/IEDM.2004.1419106, 2004, 195.
13. K. R. Kim, H. H. Kim, K.-W. Song, J. I. Huh, J. D. Lee, and B.-G. Park, IEEE Trans. Nanotechnol. ZZZZZZ 1536-125X 4, 317 (2005).
14. J. Appenzeller, Y. M. Lin, J. Knoch, and P. Avouris, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.93.196805 93, 196805 (2004).
15. J. Appenzeller, L. Yu-Ming, J. Knoch, C. Zhihong, and P. Avouris, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2005.859654 52, 2568 (2005).
16. S. O. Koswatta, D. E. Nikonov, and M. S. Lundstrom, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2005, 518.
17. Y. R. Lu, S. Bangsaruntip, X. R. Wang, L. Zhang, Y. Nishi, and H. J. Dai, J. Am. Chem. Soc. JACSAT 0002-7863 10.1021/ja058836v 128, 3518 (2006).
18. G. Zhang, X. Wang, X. Li, Y. Lu, A. Javey, and H. Dai, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2006, 431.
19. J. Knoch, S. Mantl, and J. Appenzeller, Solid-State Electron. SSELA5 0038-1101 10.1016/j.sse.2007.02.001 51, 572 (2007).
20. W. Y. Choi, B.-G. Park, J. D. Lee, and T.-J. K. Liu, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2007.901273 28, 743 (2007).
21. R. Saito, G. Dresselhaus, and M. S. Dresselhaus, Physical Property of Carbon Nanotubes (Imperial College Press, London, 1998).
22. J. Guo, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2060942 98, 063519 (2005).
23. S. O. Koswatta, S. Hasan, M. S. Lundstrom, M. P. Anantram, and D. E. Nikonov, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2007.902900 54, 2339 (2007).
24. A. Javey, J. Guo, D. B. Farmer, Q. Wang, E. Yenilmez, R. G. Gordon, M. Lundstrom, and H. J. Dai, Nano Lett. NALEFD 1530-6984 10.1021/nl049222b 4, 1319 (2004).
25. S. O. Koswatta, M. S. Lundstrom, and D. E. Nikonov, Nano Lett. NALEFD 1530-6984 10.1021/nl062843f 7, 1160 (2007).
26. M. Pourfath, H. Kosina, and S. Selberherr, J. Phys.: Conf. Ser. JPCSDZ 1742-6588 10.1088/1742-6596/38/1/008 38, 29 (2006).
27. S. O. Koswatta, M. S. Lundstrom, M. P. Anantram, and D. E. Nikonov, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2146065 87, 3 (2005).
28. S. Datta, Quantum Transport: Atom to Transistor (Cambridge University Press, Cambridge, 2005).
29. R. Venugopal, Z. Ren, S. Datta, M. S. Lundstrom, and D. Jovanovic, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1503165 92, 3730 (2002).
30. S. Hasan, M. A. Alam, and M. S. Lundstrom, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2007.903291 54, 2352 (2007).
31. E. M. Conwell, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.22.1761 22, 1761 (1980).
32. C. Rivas, R. Lake, G. Klimeck, W. R. Frensley, M. V. Fischetti, P. E. Thompson, S. L. Rommel, and P. R. Berger, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1343500 78, 814 (2001).