Comparing carbon nanotube transistors - The ideal choice: A novel tunneling device design

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2568-2576

  Appenzeller, Joerg ^a   Lin, Yu Ming ^a   Knoch, Joachim ^b   Chen, Zhihong ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Carbon nanotube (CN); Field effect transistor (FET); Tunneling (T) device

Indexed keywords

CARBON NANOTUBES; COMPUTER SIMULATION; ELECTRON TUNNELING; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CARBON NANOTUBE FIELD-EFFECT TRANSISTOR (CNFET); CARBON NANOTUBE TRANSISTORS; TUNNELING DEVICE; TUNNELING DEVICE DESIGN;

FIELD EFFECT TRANSISTORS;

EID: 29244461475     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859654     Document Type: Article

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