Fully depleted nanowire field-effect transistor in inversion mode

Small

Volumn 3, Issue 2, 2007, Pages 230-234

  Hayden, Oliver ^a   Björk, Mikael T ^a   Schmid, Heinz ^a   Riel, Heike ^a   Drechsler, Ute ^a   Karg, Siegfried F ^a   Lörtscher, Emanuel ^a   Riess, Walter ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

Field effect transistors; Nanotechnology; Nanowires; Silicon

Indexed keywords

ELECTROSTATICS; NANOTECHNOLOGY; SILANES; SILICON; SURFACE PHENOMENA; TRANSPORT PROPERTIES;

NANOWIRES; SCHOTTKY CONTACTS; ULTRASONICATION; VAPOR LIQUID SOLID (VLS);

FIELD EFFECT TRANSISTORS;

NANOTUBE; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRICITY; ELECTROCHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC WIRING; ELECTROCHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SILICON; TRANSISTORS;

EID: 33847042304     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200600325     Document Type: Article

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