Dual-gate silicon nanowire transistors with nickel silicide contacts

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Appenzeller, J ^a   Knoch, J ^b   Tutuc, E ^a   Reuter, M ^a   Guha, S ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NICKEL; NICKEL ALLOYS; NONMETALS; TRANSISTORS;

CARRIER INJECTIONS; GATE FIELDS; LOW TEMPERATURE; NICKEL SILICIDE; NICKEL SUICIDE; SILICON NANOWIRE TRANSISTORS; SOURCE/DRAIN EXTENSION;

SILICON;

EID: 46049092015     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346842     Document Type: Conference Paper

References (10)

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