Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain

Applied Physics Letters

Volumn 90, Issue 23, 2007, Pages

  Cohen, G M ^a   Rooks, M J ^a   Chu, J O ^a   Laux, S E ^a   Solomon, P M ^a   Ott, J A ^a   Miller, R J ^a   Haensch, W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; MOS DEVICES; SCHOTTKY BARRIER DIODES;

SILICON EPITAXY; UNIPOLAR TRANSPORT; VAPOR-LIQUID-SOLID METHOD;

NANOWIRES;

EID: 34250783172     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2746946     Document Type: Article

References (13)

1. A. Asenov, A. R. Brown, J. H. Davies, S. Kaya, and G. Slavcheva, IEEE Trans. Electron Devices 50, 1837 (2003).
2. E. Tutuc, J. Appenzeller, M. C. Reuter, and S. Guha, Nano Lett. 6, 2070 (2006).
3. E. Tutuc, S. Guha, and J. O. Chu, Appl. Phys. Lett. 88, 043113 (2006).
4. P. Ling, K. K. Lew, J. M. Redwing, and E. Dickey, J. Cryst. Growth 277, 428 (2005).
5. B. Kalache, P. R. Cabarrocas, and A. F. Morral, Jpn. J. Appl. Phys., Part 2 45, L190 (2006).
6. C. Yang, Z. Zhong, and C. M. Lieber, Science 310, 1304 (2005).
7. Y. Wang, T. T. Ho, S. Dilts, K. K. Lew, B. Liu, S. Mohney, J. Redwing, and T. Mayer, Device Research Conference (DRC) Digest, State College, PA, 2006, p. 175.
8. W. M. Weber, L. Geelhaar, A. P. Graham, E. Unger, G. S. Duesberg, M. Liebau, W. Pamler, C. Cheze, H. Riechert, P. Lugli, and F. Kreupl, Nano Lett. 6, 2660 (2006).
9. O. Hayden, M. T. Björk, H. Schmid, H. Riel, U. Drechsler, S. F. Karg, E. Lörtscher, and W. Riess, Small 3, 230 (2007).
10. B. J. Greene, J. Valentino, J. L. Hoyt, and J. F. Gibbons, Mater. Res. Soc. Symp. Proc. 609, A9.3.1 (2000).
11. Y. Taur and T. H. Ning, Fundamental of Modern VLSI Devices (Cambridge University, Cambridge, 1998), p. 138.
12. S. E. Laux, A. Kumar, and M. V. Fischetti, J. Appl. Phys. 95, 5545 (2004).
13. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices 41, 2363 (1994).