Silicon nanowire tunneling field-effect transistors

Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

  Bjork M T ^a   Knoch, J ^a   Schmid, H ^a   Riel, H ^a   Riess, W ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; FIELD EFFECT TRANSISTORS; PARAMETER ESTIMATION; SILICON; THICKNESS MEASUREMENT;

SILICON NANOWIRES (NW); WENZEL KRAMER BRILLOUIN APPROXIMATION;

NANOWIRES;

EID: 44049092149     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2928227     Document Type: Article

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