Structural and electrical properties of trimethylboron-doped silicon nanowires

Applied Physics Letters

Volumn 85, Issue 15, 2004, Pages 3101-3103

  Lew, Kok Keong ^a   Pan, Ling ^a   Bogart, Timothy E ^a   Dilts, Sarah M ^a   Dickey, Elizabeth C ^a   Redwing, Joan M ^a   Wang, Yanfeng ^b   Cabassi, Marco ^b   Mayer, Theresa S ^b   Novak, Steven W ^c  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

^c Evans East   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL VOLTAGE; FIELD-EMISSION SCANNING ELECTRON MICROSCOPY (FESEM); NANOWIRES; STRUCTURAL PROPERTIES;

COATING TECHNIQUES; CONCENTRATION (PROCESS); ELECTRIC PROPERTIES; HOLE MOBILITY; ISOTHERMS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR QUANTUM WIRES; SILICON; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING BORON;

EID: 8644276396     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1792800     Document Type: Article

References (19)

1. C. M. Lieber, Sci. Am. 285, 59 (2001).
2. Y. Cui, and C. M. Lieber, Science 291, 851 (2001).
3. Y. Cui, Z. Zhong, D. Wang, W. U. Wang, and C. M. Lieber, Nano Lett. 3, 149 (2003).
4. Y. Cui, Q. Wei, H. Park, and C. M. Lieber, Science 293, 1289 (2001).
5. M. S. Gudiksen, L. J. Lauhon, J. Wang, D. C. Smith, and C. M. Lieber, Nature (London) 415, 617 (2002).
6. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
7. R. S. Wagner, W. C. Ellis, K. A. Jackson, and S. M. Arnold, J. Appl. Phys. 35, 2993 (1964).
8. Y. Cui, X. Duan, J. Hu, and C. M. Lieber, J. Phys. Chem. B 104, 5213 (2000).
9. L. J. Lauhon, M. S. Gudiksen, D. Wang, and C. M. Lieber, Nature (London) 420, 57 (2002).
10. K.-K. Lew, C. Reuther, A. H. Carim, and J. M. Redwing, J. Vac. Sci. Technol. B 20, 389 (2002).
11. A. H. Carim, K.-K. Lew, and J. M. Redwing, Adv. Mater. (Weinheim, Ger.) 13, 1489 (2001).
12. J. K. Bragg, L. V. McCarty, and F. J. Norton, J. Am. Chem. Soc. 73, 2134 (1951).
13. F. C. Eversteyn and B. H. Put, J. Electrochem. Soc. 120, 106 (1973).
14. C. M. Maritan, L. P. Berndt, N. G. Tarr, J. M. Bullerwell, and G. M. Jenkins, J. Electrochem. Soc. 135, 1793 (1988).
15. S. Nakayama, I. Kawashima, and J. Murota, J. Electrochem. Soc. 133, 1721 (1986).
16. H. Tarui, T. Matsuyama, S. Okamoto, H. Dohjoh, Y. Hishikawa, N. Nakamura, S. Tsuda, S. Nakano, M. Ohnishi, and Y. Kuwano, Jpn. J. Appl. Phys., Part l 28, 2436 (1989).
17. P. A. Smith, C. D. Nordquist, T. N. Jackson, T. S. Mayer, B. R. Martin, J. Mbindyo, and T. E. Mallouk, Appl. Phys. Lett. 77, 1399 (2000).
18. W. M. Bullis, Solid-State Electron. 9, 143 (1966).
19. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and Ph. Avouris, Phys. Rev. Lett. 89, 126801 (2002).