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Japanese Journal of Applied Physics

Volumn 47, Issue 7 PART 1, 2008, Pages 5404-5408

Quencher effects at 22 nm pattern formation in chemically amplified resists

(4) Kozawa, Takahiro a Tagawa, Seiichi a Santillan, Julius Joseph a,b Itani, Toshiro a,b

a OSAKA UNIVERSITY (Japan)

b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

Author keywords

Acid; Chemically amplified resist; Diffusion constant; EUV lithography; Quencher

Indexed keywords

ACIDS; DIFFUSION; ELECTRON BEAM LITHOGRAPHY; PHOTORESISTORS; QUENCHING; ROUGHNESS MEASUREMENT; SEMICONDUCTOR DOPING; ULTRAVIOLET DEVICES;

ACID DIFFUSIONS; BASIC COMPOUNDS; CHEMICALLY AMPLIFIED RESIST; CHEMICALLY AMPLIFIED RESISTS; DIFFUSION CONSTANT; DIFFUSION CONSTANTS; EUV LITHOGRAPHY; EUV RESISTS; EXTREME ULTRAVIOLETS; HIGH MOBILITIES; IN DIFFUSIONS; LATENT IMAGES; LINE EDGE ROUGHNESSES; LINE WIDTHS; PATTERN DEPENDENCES; PATTERN FORMATIONS; QUENCHER; REACTION MECHANISMS; RESIST PROCESSES; SIMULATION BASED;

PHOTORESISTS;

EID: 55149104618 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.5404 Document Type: Article

Times cited : (19)

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