The accuracy of simulation based on the acid-quencher mutual diffusion model in KrF processes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 II, Issue , 2002, Pages 1243-1253

  Hattori, K ^a   Abe, J ^a   Fukuda, H ^a  

^a HITACHI LTD   (Japan)

Author keywords

Acid; Chemically amplified resist; Diffusion; Proximity effect; Quencher; Simulation

Indexed keywords

ANTIREFLECTION COATINGS; COMPUTER SIMULATION; DIFFRACTION; DIFFUSION; INTEGRATED CIRCUIT LAYOUT; ITERATIVE METHODS; QUENCHING; SILICON WAFERS;

ACID-QUENCHER MUTUAL DIFFUSION;

PHOTORESISTS;

EID: 0036413415     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.474505     Document Type: Conference Paper

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