Potential cause of inhomogeneous acid distribution in chemically amplified resists for post optical lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 B, 2005, Pages 5836-5838

  Yamamoto, Hiroki ^a   Kozawa, Takahiro ^a   Nakano, Atsuro ^a   Okamoto, Kazumasa ^a   Tagawa, Seiichi ^a   Ando, Tomoyuki ^b   Sato, Mitsuru ^b   Komano, Hiroji ^b  

^a OSAKA UNIVERSITY   (Japan)

^b TOKYO OHKA KOGYO CO LTD   (Japan)

Author keywords

Chemically amplified resist; Inhomogeneous distribution; Line edge roughness; Poly(4 hydroxystyrene); Protecting group

Indexed keywords

IONIZING RADIATION; PHOTOLITHOGRAPHY; POLYMERS; STYRENE;

CHEMICALLY AMPLIFIED RESISTS; INHOMOGENEOUS DISTRIBUTION; LINE EDGE ROUGHNESS; PROTECTING GROUP;

PHOTORESISTS;

EID: 29044431922     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.5836     Document Type: Article

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