Dependence of absorption coefficient and acid generation efficiency on acid generator concentration in chemically amplified resist for extreme ultraviolet lithography

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 36-40, 2007, Pages

  Hirose, Ryo ^a   Kozawa, Takahiro ^a   Tagawa, Seiichi ^a   Kai, Toshiyuki ^b   Shimokawa, Tsutomu ^b  

^a OSAKA UNIVERSITY   (Japan)

^b JSR CORPORATION   (Japan)

Author keywords

Absorption coefficient; Acid generation efficiency; Acid generator concentration; Chemically amplified resist; EUV lithography

Indexed keywords

EXTREME ULTRAVIOLET LITHOGRAPHY; FILM THICKNESS; PHOTONS;

ABSORPTION COEFFICIENT; ACID GENERATION EFFICIENCY; ACID GENERATOR CONCENTRATION; CHEMICALLY AMPLIFIED RESIST;

THIN FILMS;

EID: 36049022395     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L979     Document Type: Article

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