MOCVD-grown dilute nitride type II quantum wells

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 14, Issue 4, 2008, Pages 979-991

  Mawst, L J ^a   Huang, Juno Yu Ting ^a   Xu, D P ^a   Yeh, Jeng Ya ^a   Tsvid, Gene ^a   Kuech, Thomas F ^a   Tansu, Nelson ^b  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b Lehigh University   (United States)

Author keywords

GaAs; GaAsSb; GaInNAs; mid IR; Semiconductor lasers; Ten band k.p Hamiltonian; Type II

Indexed keywords

GALLIUM ALLOYS; ION BEAM ASSISTED DEPOSITION; METALS; NITRIDES; NITROGEN; NONMETALS; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; PLASMA CONFINEMENT; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; WELLS;

DESIGN STUDIES; DILUTE NITRIDES; ELECTRON CONFINEMENTS; EMISSION WAVE LENGTH; GAAS; GAAS SUBSTRATES; GAASSB; GAINNAS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; MID-IR; NITROGEN INCORPORATION; SEMICONDUCTOR LASERS; TEN-BAND K.P HAMILTONIAN; TYPE II; TYPE-II QUANTUM WELLS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 48949104914     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.918105     Document Type: Article

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