Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes

IEEE Photonics Technology Letters

Volumn 12, Issue 6, 2000, Pages 597-599

  Borchert, B ^a   Egorov, A Y ^a,b   Illek, S ^a   Riechert, H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DISTRIBUTED FEEDBACK LASERS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

RIDGE WAVEGUIDE LASER; VERTICAL CAVITY SURFACE EMITTING LASERS; WAVELENGTH LASER EMISSION;

QUANTUM WELL LASERS;

EID: 0034205636     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.849055     Document Type: Article

References (12)

1. M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, and K. Uomi, "GaInNAs: A novel material for long-wavelength semiconductor lasers," IEEE J. Sel. Topics Quantum Electron., vol. 3, pp. 719-730, 1997.
2. T. Miyamato, K. Takeuchi, T. Kageyama, F. Koyama, and K. Iga, "Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property," J. Cryst. Growth, vol. 197, pp. 67-72, 1998.
3. A. Y. Egorov, D. Bernklau, D. Livshits, V. Ustinov, Z. I. Alferov, and H. Riechert, "High power CW operation of InGaAsN lasers at 1.3 μm," Electron. Lett., vol. 35, pp. 1643-1644, 1999.
4. F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, and M. Druminski, "Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum-well lasers for emission wavelengths in the range 1.28-1.38 μm," Electron. Lett., vol. 35, pp. 571-572, 1999.
5. S. Sato and S. Satoh, "1.3 μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapor deposition," Electron. Lett., vol. 35, pp. 1251-1252, 1999.
6. M. Reinhardt, M. Fischer, M. Kamp, J. Hofmann, and A. Forchel, "1.3 μm GaInNAs-AlGaAs DFB lasers," IEEE Photon. Technol. Lett., vol. 12, pp. 239-241, 1999.
7. M. C. Larson, M. Kondow, T. Kitatani, K. Nakahara, K. Tamura, H. Inoue, and K. Uomi, "GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 10, pp. 188-190, 1998.
8. B. Borchert, A. Y. Egorov, S. Illek, and M. Komainda, "1.29 μm GaInNAs multiple quantum-well (MQW) ridge-waveguide (RWG) laser diodes with improved performance," Electron. Lett., vol. 35, pp. 2204-2206, 1999.
9. M. Hetterich, M. D. Dawson, A. Y. Egorov, D. Bernklau, and H. Riechert, "Electronic states and band alignment in GaInNAs/GaAs quantum-well structures with low nitrogen content," Appl. Phys. Lett., vol. 76, pp. 1030-1032, 2000.
10. K. Petermann, "Laser diode modulation and noise," in Series Advances in Optoelectronics. Norwell, MA: Kluwer Academic, 1991, p. 83.
11. W. Shan, W. Walukiewicz, J. W. Ager, III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, "Band anticrossing in GaInNAs alloys," Phys. Rev. Lett., vol. 82, pp. 1221-1224, 1999.
12. P. Steinmann, "Quantum-well Strukturen für die monolithische Integration eines Lasers und eines Modulators mit einer durchgehenden aktiven Schicht," Ph.D. dissertation, Technical Univ. Munich, Munich, Germany, 1998.