High-performance CW 1.26-μm GaInNAsSb-SQW ridge lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 7, Issue 2, 2001, Pages 355-364

  Shimizu, Hitoshi ^b   Kumada, Kouji ^b   Uchiyama, Seiji ^a,b   Kasukawa, Akihiko ^a,b  

^a IEEE

^b FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

Communication systems; Epitaxial growth; GaInNAs; Highly strained; Quantum well lasers; Ridge laser; Sb; Surfactant

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRIC CURRENT MEASUREMENT; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THREE DIMENSIONAL; TWO DIMENSIONAL;

GAS SOURCE MOLECULAR BEAM EPITAXY; RIDGE LASERS; THREE DIMENSIONAL GROWTH; THRESHOLD CURRENT; TWO DIMENSIONAL GROWTH;

QUANTUM WELL LASERS;

EID: 0035263856     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.954150     Document Type: Article

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