Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers

Applied Physics Letters

Volumn 87, Issue 24, 2005, Pages 1-3

  Grau, M ^a,b   Lin, C ^a,c   Dier, O ^a   Lauer, C ^a   Amann, M C ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b VERTILAS GMBH   (Germany)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GAS ABSORPTION; LIGHT ABSORPTION; SEMICONDUCTING GALLIUM COMPOUNDS; WAVEGUIDES;

ABSORPTION LINE; OPTICAL QUALITY; ROOM TEMPERATURE;

SEMICONDUCTOR LASERS;

EID: 30344463031     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2140875     Document Type: Article

References (5)

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4. J. G. Kim, L. Shterengas, and G. L. Belenky, Appl. Phys. Lett. 83, 1926 (2003).
5. M. P. C. M. Krijn, Semicond. Sci. Technol. 6, 27 (1991).