High-power 1.3-μm InGaAsN strain-compensated lasers fabricated with pulsed anodic oxidation

Applied Physics Letters

Volumn 85, Issue 22, 2004, Pages 5149-5151

  Qu, Yi ^a   Liu, C Y ^a   Yuan, Shu ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRIC EXCITATION; ENERGY GAP; LASER APPLICATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

BANDGAP; PULSED ANODIC OXIDATION; STRAIN-COMPENSATED BARRIER; THRESHOLD-CURRENT DENSITY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 11044237375     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1828596     Document Type: Article

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