Design analysis of 1550-nm GaAsSb-(In)GaAsN type-II quantum-well laser active regions

IEEE Journal of Quantum Electronics

Volumn 39, Issue 10, 2003, Pages 1205-1210

  Tansu, Nelson ^a   Mawst, Luke J ^b  

^a Lehigh University   (United States)

^b University of Wisconsin Madison   (United States)

Author keywords

Diode lasers; Epitaxial growth; GaAsN quantum well; GaAsSb quantum well; InGaAsN quantum well; Long wavelength lasers; Strain; Type II quantum well lasers; Vertical cavity lasers

Indexed keywords

CHARGE CARRIERS; EPITAXIAL GROWTH; LASER RESONATORS; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SYSTEMS ANALYSIS;

GALLIUM ARSENIDE NITRIDE QUANTUM WELL; LONG-WAVELENGTH LASERS; VERTICAL CAVITY LASERS;

QUANTUM WELL LASERS;

EID: 0141987543     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.817235     Document Type: Article

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