Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers

IEEE Photonics Technology Letters

Volumn 12, Issue 2, 2000, Pages 131-133

  Gokhale, M R ^a   Studenkov, P V ^a   Wei, J ^a   Forrest, S R ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; LASER PULSES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

QUANTUM WELL LASERS;

EID: 0034135674     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.823493     Document Type: Article

References (13)

1. M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, "GaInNAs: A novel material for long-wavelength semiconductor lasers," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 719-729, 1997.
2. T. Kitatani, M. Kondow, K. Nakahara, M. C. Larson, and K. Uomi, "Temperature dependence of the threshold current and the lasing wavelength in 1.3 αm GaInNAs/GaAs single quantum well laser diode," Opt. Rev., vol. 5, pp. 69-71, 1998.
3. M. C. Larson, M. Kondow, T. Kitatani, K. Nakahara, K. Tamura, H. Inoue, and K. Uomi, "GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes," IEEE Photon. Technol. Lett., vol. 10, pp. 188-190, 1998.
4. K. Nakahara, M. Kondow, T. Kitatani, M. C. Larson, and K. Uomi, "1.3 μm continuous-wave operation in GaInNA's quantum-well lasers," IEEE Photon. Technol. Lett., vol. 10, pp. 487-488, 1998.
5. S. Sato and S. Satoh, "Room-temperature continuous-wave operation of 1.24 μm GaInNA's lasers grown by metalorganic chemical vapor deposition," presented at the 16th Int. Semiconductor Laser Conf., Nara, Japan, Oct. 1998, postdeadline paper PD-5.
6. _, "Metalorganic chemical vapor deposition of GaInNA's lattice matched to GaAs for long-wavelength laser diodes," J. Cryst. Growth, vol. 192, pp. 381-385, 1998.
7. D. E. Mars, D. I. Babic, Y. Kaneko, Y. L. Chang, S. Subramanya, J. Kruger, P. Perlin, and E. R. Weber, "Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy," J. Vacuum Sci. Technol. B, vol. 17, pp. 1272-1275, 1999.
8. F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, and M. Druminski, "Reduced threshold current densities of (GaIn)(NA's)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm," Electron. Lett., vol. 35, pp. 571-572, 1999.
9. S. Sato and S. Satoh, "1.3 μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapor deposition," Electron. Lett., vol. 35, pp. 1251-1252, 1999.
10. X. Yang, M. J. Jurkovic, J. B. Heroux, and W. I. Wang, "Molecular beam epitaxial growth of InGaAsN : Sb/GaAs quantum wells for long-wavelength semiconductor lasers," Appl. Phys. Lett., vol. 75, pp. 178-180, 1999.
11. X. Yang, M. J. Jurkovic, J. B. Heroux, and W. I. Wang, "Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant," Electron. Lett., vol. 35, pp. 1082-1083, 1999.
12. M. R. Gokhale, J. Wei, P. V. Studenkov, H. Wang, and S. R. Forrest, "High-performance long-wavelength (λ ∼ 1.3 μm) InGaAsPN quantum-well lasers," IEEE Photon. Technol. Lett., vol. 11, pp. 952-954, 1999.
13. M. R. Gokhale, J. C. Dries, P. V. Studenkov, S. R. Forrest, and D. Z. Garbuzov, "High-power high-efficiency 0.98 μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy," IEEE J. Quantum. Electron., vol. 33, pp. 2266-2276, 1997.