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Volumn 83, Issue 14, 2003, Pages 2742-2744

(In)GaAsN-based type-II "W" quantum-well lasers for emission at λ = 1.55 μm

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; FUNCTIONS; OPTIMIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SPONTANEOUS EMISSION;

EID: 0141997502     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1616193     Document Type: Article
Times cited : (59)

References (24)
  • 7
    • 0142225778 scopus 로고    scopus 로고
    • International Patent Application No. PCT/US00/14332 (WO01/29943), May 24, 2000
    • P. D. Dapkus, International Patent Application No. PCT/US00/14332 (WO01/29943), May 24, 2000.
    • Dapkus, P.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.