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Applied Physics Letters

Volumn 83, Issue 7, 2003, Pages 1343-1345

Optimized annealing conditions identified by analysis of radiative recombination in dilute Ga(As,N)

(5) Mussler, Gregor a Däweritz, Lutz a Ploog, Klaus H a Tomm, Jens W b Talalaev, Vadim b

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

b MAX BORN INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAMERAS; CHARGE COUPLED DEVICES; OPTIMIZATION; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE;

RADIATIVE RECOMBINATION;

OPTOELECTRONIC DEVICES;

EID: 0042919503 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1602576 Document Type: Article

Times cited : (17)

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