Low-lattice-strain long-wavelength GaAsSb/GaInAs type-II quantum wells grown on GaAs substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 10 A, 2002, Pages

  Kudo, Makoto ^a   Ouchi, Kiyoshi ^a   Kasai, Jun Ichi ^a   Mishima, Tomoyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Coupled double quantum wells; GaAsSb; GalnAs; Lattice strain; Molecular beam epitaxy; Type II

Indexed keywords

CRYSTAL LATTICES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; STRAIN; THERMAL EFFECTS;

COUPLED DOUBLED QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 0036814802     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1040     Document Type: Article

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