Effect of annealing on the in and N distribution in InGaAsN quantum wells

Applied Physics Letters

Volumn 81, Issue 15, 2002, Pages 2719-2721

  Albrecht, M ^a   Grillo, V ^a   Remmele, T ^a   Strunk, H P ^a   Egorov, A Yu ^b   Dumitras, Gh ^b   Riechert, H ^b   Kaschner, A ^c   Heitz, R ^c   Hoffmann, A ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BLUE SHIFT; COMPOSITIONAL ANALYSIS; COMPOSITIONAL FLUCTUATIONS; CONCENTRATION FLUCTUATION; INGAASN QUANTUM WELLS; LENGTH SCALE; QUANTUM WELL; STOKES SHIFT;

ANNEALING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79956051409     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509122     Document Type: Article

References (18)

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