Contributions to the large blue emission shift in a GaAsSb type-II laser

IEEE Journal of Quantum Electronics

Volumn 37, Issue 9, 2001, Pages 1178-1182

  Chow, W W ^a   Spahn, O B ^a   Schneider, H C ^a   Klem, J F ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Quantum well lasers; Semiconductor laser; Surfacing emitting laser; Type II quantum well

Indexed keywords

CHARGE CARRIERS; ELECTRONS; ENERGY GAP; LIGHT EMISSION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES;

BAND-DISTORTION; BLUE EMISSION SHIFT; CHARGE-SEPARATION; SOLID-SOURCE MOLECULAR BEAM EPITAXY; THRESHOLD GAIN;

QUANTUM WELL LASERS;

EID: 0035445460     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.945323     Document Type: Article

References (18)

1. GaAs-based long-wavelength lasers
2. Type-II quantum-well lasers for the mid-wavelength infrared
3. 1-yAs/GaAs) bilayer-quantum well
4. Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers
5. Tunable long-wavelength vertical-cavity lasers: The engine of the next generation optical networks?
6. Characteristics of GaAsSb single-quatnum-well-lasers emitting near 1.3 μm
7. Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapor deposition on GaAs substates
8. GaAsSb: A novel material for 1.3 μm VCSELs
9. Low-threshold lasing at 1.3 μm from GaAsSb quantum wells directly grown on GaAs substrates
10. x/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy
11. Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach
12. Motion of electrons and holes in perturbed periodic fields
13. Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100-1550 nm range
14. Measurement of gain and absorption in AlGaAs buried heterostructure lasers
15. Charge-separation effects in 1.3 m GaAsSb type-II quantum well laser gain