Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-3

  Nuntawong, N ^a   Xin, Y C ^a   Birudavolu, S ^a   Wong, P S ^a   Huang, S ^a   Hains, C P ^a   Huffaker, D L ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; CRYSTALLINITY; LATTICE MISMATCH; ROOM-TEMPERATURE PHOTOLUMINESCENCE (RTPL);

ATOMIC FORCE MICROSCOPY; GROUND STATE; GROWTH KINETICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; OPTIMIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SPUTTERING; STRAIN; X RAY DIFFRACTION ANALYSIS;

QUANTUM WELL LASERS;

EID: 20844461659     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1926413     Document Type: Article

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