Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs

Applied Physics Letters

Volumn 75, Issue 9, 1999, Pages 1267-1269

  Dowd, P ^a   Braun, W ^a,b   Smith, David J ^a,c   Ryu, C M ^a   Guo, C Z ^a,d   Chen, S L ^a,e   Koelle, U ^a   Johnson, S R ^a   Zhang, Y H ^a  

^a Arizona State University   (United States)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c ARIZONA STATE UNIVERSITY   (United States)

^d PEKING UNIVERSITY   (China)

^e TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

FULL WIDTH AT HALF MAXIMUM (FWHM); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032606932     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124663     Document Type: Article

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