MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 652-657

  Bugge, F ^a   Zeimer, U ^a   Staske, R ^a   Sumpf, B ^a   Erbert, G ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. InGaAs; B3. Laser diodes

Indexed keywords

HIGH POWER LASERS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

BARRIER THICKNESS; EMISSION WAVELENGTHS; HIGH POWER LASER DIODES; STRAIN COMPENSATION;

SEMICONDUCTOR LASERS;

EID: 33846435324     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.086     Document Type: Article

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