Room-temperature continuous-wave operation of 1.24-μm GaInNAs lasers grown by metal-organic chemical vapor deposition

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 707-710

  Sato, Shunichi ^a   Satoh, Shiro ^a  

^a RICOH COMPANY LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRAIN; TEMPERATURE; WAVES;

CONTINUOUS WAVE OPERATION; LONG WAVELENGTH; SEMICONDUCTING GALLIUM INDIUM ARSENIDE; SEMICONDUCTING GALLIUM INDIUM NITRIDE ARSENIDE; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0033123897     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788439     Document Type: Article

References (20)

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