GaAsSb: A novel material for 1.3μm VCSELs

Electronics Letters

Volumn 34, Issue 22, 1998, Pages 2127-2129

  Anan, T ^a   Nishi, K ^a   Sugou, S ^a   Yamada, M ^a   Tokutome, K ^a   Gomyo, A ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MIRRORS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

DISTRIBUTED BRAGG REFLECTOR; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032180371     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981451     Document Type: Article

References (7)

1. WEIGL, B., GRABHERR, M., JUNG. C., JAGER, R., REINER, G., MICHALZIK, R., SOWADA, D.K.J., and EBELING,: 'High-performance oxide-confined GaAs VCSEL's', IEEE J. Sci. Topics Quantum Electron., 1997, 3, pp. 409-415
2. DUDLEY, J.J., BABIC, D.I., MIRIN, R., YANG, L., MILLER, B.I., RAM, R.J., REYNOLDS, T., HU, E.L., and BOWERS, J.E.: 'Low threshold wafer fused long wavelength vertical cavity lasers', Appl. Phys. Lett., 1994, 64, pp. 1463-1465
3. KONDOW, M., KITATANI, T., and UOMI, K.: 'GaInNAs: A novel material for long-wavelength semiconductor lasers', IEEE J. Sel. Topics Quantum Electron., 1997, 3, pp. 719-730
4. MIRIN, R.P., IBBETSON, J.P., NISHI, K., GOSSARD, A.C., and BOWERS, J.E.: '1.3μm photoluminescence from InGaAs quantum dots on GaAs', Appl. Phys. Lett., 1995, 67, pp. 3795-3797
5. 1-yAs)/GaAs bilayer-quantum well', Appl. Phys. Lett., 1995, 67, pp. 2639-2641
6. x/GaAs quantum wells from high-pressure photoluminescence', Phys. Rev. B, 1993, 47, pp. 2191-2196
7. 1-x, Jpn. J. Appl. Phys., 1978, 17, pp. 2091-2096