Characteristics of GaAsSb single-quantum-well-lasers emitting near 1.3 μm

IEEE Photonics Technology Letters

Volumn 12, Issue 7, 2000, Pages 771-773

  Blum, Olga ^a   Klem, John F ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; LIGHT EMISSION; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TEMPERATURE MEASUREMENT;

GALLIUM ARSENIDE ANTIMONIDE; PULSED EMISSION; VERTICAL CAVITY SURFACE EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 0034228769     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.853495     Document Type: Article

References (10)

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