Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 419-422

  Xin, H P ^a   Kavanagh, K L ^a   Kondow, M ^b   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (TEM);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032643186     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01366-9     Document Type: Article

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