Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1-ySby films grown via metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 303, Issue 2, 2007, Pages 456-465

  Khandekar, A A ^a   Yeh, J Y ^a   Mawst, L J ^a   Song, Xueyan ^b   Babcock, S E ^b   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

A1. X ray diffraction; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN RELAXATION; THERMODYNAMIC PROPERTIES; X RAY DIFFRACTION;

METASTABLE ALLOYS; MOLE FRACTIONS; PRECURSOR CHEMISTRY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34247249940     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.034     Document Type: Article

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