1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition

IEEE Photonics Technology Letters

Volumn 11, Issue 12, 1999, Pages 1572-1574

  Choi, Won Jin ^a   Dapkus, P Daniel ^a   Jewell, Jack J ^b  

^a University of Southern California ^*  (United States)

^b Picolight Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

SINGLE-QUANTUM-WELL (SQW) LASERS;

QUANTUM WELL LASERS;

EID: 0033327935     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.806850     Document Type: Article

References (9)

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