Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes

Applied Physics Letters

Volumn 81, Issue 13, 2002, Pages 2334-2336

  Mogg, S ^a   Chitica, N ^b   Schatz, R ^a   Hammar, M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

^b Mitel Semiconductor AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; FIGURES OF MERITS; GAAS SUBSTRATES; HIGHLY STRAINED; INGAAS QUANTUM WELLS; INGAAS/GAAS; INJECTION CURRENTS; OPTICAL GAIN SPECTRA; RIDGE WAVEGUIDE LASERS; TRANSPARENCY CURRENT DENSITY; VERTICAL CAVITY LASERS;

GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 79956036643     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509478     Document Type: Article

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