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Journal of Crystal Growth

Volumn 274, Issue 1-2, 2005, Pages 85-89

Growth of highly strained InGaAs quantum wells on GaAs substrates - Effect of growth rate

(3) Tan, H H a Lever, P a Jagadish, C a

a AUSTRALIAN NATIONAL UNIVERSITY (Australia)

Author keywords

A1. Surface process; A3. MOVPE; A3. Strained QWs; B2. InGaAs GaAs

Indexed keywords

DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; RELAXATION PROCESSES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES;

BIAXIAL COMPRESSIVE STRAIN; DOT FORMATION; SURFACE PROCESSES;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 11144337394 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.10.031 Document Type: Article

Times cited : (20)

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