GaInNAs: A novel material for long-wavelength semiconductor lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 719-729

  Kondow, Masahiko ^b,c,d   Kitatani, Takeshi ^b,d,e   Nakatsuka, Shin'ichi ^b,d,f   Larson, Michael C ^b   Nakahara, Kouji ^b   Yazawa, Yoshiaki ^b   Okai, Makoto ^a,b   Uomi, Kazuhisa ^b  

^a IEEE

^b HITACHI LTD   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^e UNIVERSITY OF TSUKUBA   (Japan)

^f TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaInNAs; High temperature performance; Optical fiber communications; Quantum well; Semiconductor laser

Indexed keywords

CONTINUOUS WAVE LASERS; ENERGY GAP; HIGH TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL PUMPING; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031153819     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640627     Document Type: Article

References (34)

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