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Volumn 17, Issue 3, 1999, Pages 1144-1146

Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxy

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EID: 22644450004 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.590710 Document Type: Article

Times cited : (46)

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